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IRGP4062-EPBF - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • Low VCE (ON) Trench IGBT Technology.
  • Low switching losses.
  • Maximum Junction temperature 175 °C.
  • 5 μS short circuit SOA.
  • Square RBSOA.
  • 100% of the parts tested for ILM .
  • Positive VCE (ON) Temperature co-efficient.
  • Tight parameter distribution.
  • Lead Free Package Benefits.
  • High Efficiency in a wide range of.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100% of the parts tested for ILM  • Positive VCE (ON) Temperature co-efficient • Tight parameter distribution • Lead Free Package Benefits • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI IRGP4062-EPbF C G E n-channel VCES = 600V IC = 24A, TC = 100°C tSC 5μs, TJ(max) = 175°C VCE(on) typ. = 1.