Part IRGP4062-EPBF
Description INSULATED GATE BIPOLAR TRANSISTOR
Category Transistor
Manufacturer International Rectifier
Size 247.68 KB
International Rectifier
IRGP4062-EPBF

Overview

  • Low VCE (ON) Trench IGBT Technology
  • Low switching losses
  • Maximum Junction temperature 175 °C
  • 5 μS short circuit SOA
  • Square RBSOA
  • 100% of the parts tested for ILM 
  • Positive VCE (ON) Temperature co-efficient
  • Tight parameter distribution
  • Lead Free Package Benefits
  • High Efficiency in a wide range of applications