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IRGP4062-EPBF Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview: INSULATED GATE BIPOLAR TRANSISTOR.

IRGP4062-EPBF datasheet preview

Datasheet Details

Part number	IRGP4062-EPBF
Manufacturer	International Rectifier (now Infineon)
File Size	247.68 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP4062-EPBF-InternationalRectifier.pdf

Key Features

Low VCE (ON) Trench IGBT Technology.
Low switching losses.
Maximum Junction temperature 175 °C.
5 μS short circuit SOA.
Square RBSOA.
100% of the parts tested for ILM .
Positive VCE (ON) Temperature co-efficient.
Tight parameter distribution.
Lead Free Package Benefits.
High Efficiency in a wide range of.

More Datasheets from International Rectifier (now Infineon)

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IRGP4062-EPBF Distributor