Datasheet Summary
INSULATED GATE BIPOLAR TRANSISTOR
Features
- Low VCE (ON) Trench IGBT Technology
- Low switching losses
- Maximum Junction temperature 175 °C
- 5 μS short circuit SOA
- Square RBSOA
- 100% of the parts tested for ILM
- Positive VCE (ON) Temperature co-efficient
- Tight parameter distribution
- Lead Free Package
Benefits
- High Efficiency in a wide range of applications
- Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
- Rugged transient Performance for increased reliability
- Excellent Current sharing in parallel operation
- Low EMI
G E n-channel
VCES = 600V IC = 24A, TC = 100°C tSC 5μs, TJ(max) = 175°C VCE(on) typ. =...