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IRGP4063D-EPBF - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package C VCES = 600V IC = 48A, TC = 100°C G E tSC ≥ 5μs, TJ(max) = 175°C n-channel VCE(on) ty.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGP4063D1-EPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063D1PBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063DPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063-EPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063PBF INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRGP4063DPbF IRGP4063D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package C VCES = 600V IC = 48A, TC = 100°C G E tSC ≥ 5μs, TJ(max) = 175°C n-channel VCE(on) typ. = 1.