Datasheet4U.com

IRGP4063D-EPBF Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview: IRGP4063DPbF IRGP4063D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY.

IRGP4063D-EPBF datasheet preview

Datasheet Details

Part number	IRGP4063D-EPBF
Manufacturer	International Rectifier (now Infineon)
File Size	345.77 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP4063D-EPBF-InternationalRectifier.pdf

Key Features

Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package C VCES = 600V IC = 48A, TC = 100°C G E tSC ≥ 5μs, TJ(max) = 175°C n-channel VCE(on) ty.

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRGP4063D1-EPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063D1PBF	INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063DPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063-EPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063PBF	INSULATED GATE BIPOLAR TRANSISTOR
IRGP4062-EPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRGP4062D-EPbF	INSULATED GATE BIPOLAR TRANSISTOR
IRGP4062DPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRGP4065DPBF	PDP TRENCH IGBT
IRGP4065PBF	PDP TRENCH IGBT

IRGP4063D-EPBF Distributor