Datasheet Summary
IRGP4063DPbF IRGP4063D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
- Low VCE (ON) Trench IGBT Technology
- Low switching losses
- Maximum Junction temperature 175 °C
- 5 μS short circuit SOA
- Square RBSOA
- 100% of the parts tested for 4X rated current (ILM)
- Positive VCE (ON) Temperature co-efficient
- Ultra fast soft Recovery Co-Pak Diode
- Tight parameter distribution
- Lead Free Package
G E n-channel
VCES = 600V IC = 48A, TC = 100°C tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.65V
Benefits
- High Efficiency in a wide range of applications
- Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
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