Datasheet Summary
- 97404
INSULATED GATE BIPOLAR TRANSISTOR Features
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- Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) Temperature co-efficient Tight parameter distribution Lead Free Package
IRGP4063PbF IRGP4063-EPbF
VCES = 600V IC = 48A, TC = 100°C
G E tSC ≥ 5μs, TJ(max) = 175°C n-channel
VCE(on) typ. = 1.65V
Benefits
- High Efficiency in a wide range of applications
- Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
- Rugged transient Performance for increased reliability
- Excellent Current...