Datasheet4U Logo Datasheet4U.com

IRGP4063-EPBF Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 97404 INSULATED GATE BIPOLAR TRANSISTOR.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) Temperature co-efficient Tight parameter distribution Lead Free Package IRGP4063PbF IRGP4063-EPbF C VCES = 600V IC = 48A, TC = 100°C G E tSC ≥ 5μs, TJ(max) = 175°C n-channel C VCE(on) typ. = 1.65V Benefits.
  • High.

More Datasheets from International Rectifier (now Infineon)

Part Number Description
IRGP4063D-EPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063D1-EPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063D1PBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063DPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063PBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4062-EPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4062DPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4065DPBF PDP TRENCH IGBT
IRGP4065PBF PDP TRENCH IGBT

IRGP4063-EPBF Distributor