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IRGP4063PBF - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) Temperature co-efficient Tight parameter distribution Lead Free Package IRGP4063PbF IRGP4063-EPbF C VCES = 600V IC = 48A, TC = 100°C G E tSC ≥ 5μs, TJ(max) = 175°C n-channel C VCE(on) typ. = 1.65V Benefits.
  • High.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGP4063-EPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063D-EPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063D1-EPBF INSULATED GATE BIPOLAR TRANSISTOR
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IRGP4063DPBF INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 97404 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) Temperature co-efficient Tight parameter distribution Lead Free Package IRGP4063PbF IRGP4063-EPbF C VCES = 600V IC = 48A, TC = 100°C G E tSC ≥ 5μs, TJ(max) = 175°C n-channel C VCE(on) typ. = 1.