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IRGP4063D1PBF - INSULATED GATE BIPOLAR TRANSISTOR

Download the IRGP4063D1PBF datasheet PDF. This datasheet also covers the IRGP4063D1-EPBF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5µs short circuit SOA Lead-free, RoHS compliant Base part number IRGP4063D1PbF IRGP4063D1-EPbF Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGP4063D1-EPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGP4063D1-EPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063D-EPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063DPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063-EPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063PBF INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
  IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V   IC = 60A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.