Datasheet Summary
IRGP4063D1PbF IRGP4063D1-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 60A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 48A Applica ons
- Industrial Motor Drive
- Inverters
- UPS
- Welding
n-channel
G Gate
C G IRGP4063D1PbF C Collector
IRGP4063D1‐EPbF E Emitter
Features
Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5µs short circuit SOA Lead-free, RoHS pliant Base part number IRGP4063D1PbF IRGP4063D1-EPbF...