IRGP4066D-EPBF - INSULATED GATE BIPOLAR TRANSISTOR

This page provides the datasheet information for the IRGP4066D-EPBF, a member of the IRGP4066DPBF INSULATED GATE BIPOLAR TRANSISTOR family.

Product Overview

International Rectifier

Part number	IRGP4066D-EPBF
Manufacturer	International Rectifier
File Size	332.31 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP4066D-EPBF Datasheet
Additional preview pages of the IRGP4066D-EPBF datasheet.

Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution Lead Free Package C IRGP4066DPbF IRGP4066D-EPbF VCES = 600V IC(Nominal) = 75A G E tSC ≥ 5μs, TJ(max) = 175°C n-channel VCE(on) typ. = 1.70V Benefits.
High Efficie.

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Published: Feb 5, 2014 |