IRGP4066-EPBF - INSULATED GATE BIPOLAR TRANSISTOR

This page provides the datasheet information for the IRGP4066-EPBF, a member of the IRGP4066PBF INSULATED GATE BIPOLAR TRANSISTOR family.

Product Overview

International Rectifier

Part number	IRGP4066-EPBF
Manufacturer	International Rectifier
File Size	285.75 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP4066-EPBF Datasheet
Additional preview pages of the IRGP4066-EPBF datasheet.

Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution Lead Free Package IRGP4066PbF IRGP4066-EPbF C VCES = 600V IC(Nominal) = 75A G E tSC ≥ 5μs, TJ(max) = 175°C n-channel VCE(on) typ. = 1.7V Benefits.
High Efficienc.

Other Datasheets by International Rectifier

Published: Feb 5, 2014 |