Part IRGP4066D
Description INSULATED GATE BIPOLAR TRANSISTOR
Category Transistor
Manufacturer International Rectifier
Size 332.31 KB
International Rectifier
IRGP4066D

Overview

  • Low VCE (ON) Trench IGBT Technology
  • Low Switching Losses
  • Maximum Junction Temperature 175 °C
  • 5 μS short circuit SOA
  • Square RBSOA
  • 100% of The Parts Tested for ILM
  • Positive VCE (ON) Temperature Coefficient
  • Tight Parameter Distribution
  • Lead Free Package C G E n-channel VCES = 600V IC(Nominal) = 75A tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.70V Benefits
  • High Efficiency in a Wide Range of Applications