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IRGP4066D Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

Download the IRGP4066D datasheet PDF. This datasheet also includes the IRGP4066DPBF variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGP4066DPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Overview

PD - 97576 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGP4066DPbF.

Key Features

  • Low VCE (ON) Trench IGBT Technology.
  • Low Switching Losses.
  • Maximum Junction Temperature 175 °C.
  • 5 μS short circuit SOA.
  • Square RBSOA.
  • 100% of The Parts Tested for ILM.
  • Positive VCE (ON) Temperature Coefficient.
  • Tight Parameter Distribution.
  • Lead Free Package C G E n-channel VCES = 600V IC(Nominal) = 75A tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.70V Benefits.
  • High Efficiency in a Wide Range of Applicat.