IRGP4066D - INSULATED GATE BIPOLAR TRANSISTOR

This page provides the datasheet information for the IRGP4066D, a member of the IRGP4066DPBF INSULATED GATE BIPOLAR TRANSISTOR family.

Product Overview

International Rectifier

Part number	IRGP4066D
Manufacturer	International Rectifier
File Size	332.31 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP4066D Datasheet
Additional preview pages of the IRGP4066D datasheet.

Low VCE (ON) Trench IGBT Technology.
Low Switching Losses.
Maximum Junction Temperature 175 °C.
5 μS short circuit SOA.
Square RBSOA.
100% of The Parts Tested for ILM.
Positive VCE (ON) Temperature Coefficient.
Tight Parameter Distribution.
Lead Free Package C G E n-channel VCES = 600V IC(Nominal) = 75A tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.70V Benefits.
High Efficiency in a Wide Range of Applicat.

Other Datasheets by International Rectifier

Published: May 23, 2025 |