Datasheet Summary
- 97576
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGP4066DPbF IRGP4066D-EPbF
Features
- Low VCE (ON) Trench IGBT Technology
- Low Switching Losses
- Maximum Junction Temperature 175 °C
- 5 μS short circuit SOA
- Square RBSOA
- 100% of The Parts Tested for ILM
- Positive VCE (ON) Temperature Coefficient
- Tight Parameter Distribution
- Lead Free Package
G E n-channel
VCES = 600V IC(Nominal) = 75A tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.70V
Benefits
- High Efficiency in a Wide Range of Applications
- Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
- Rugged Transient Performance for Increased...