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IRGP4066DPBF - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

International Rectifier

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IRGP4066DPBF INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRGP4066DPBF

Datasheet Details

Part number	IRGP4066DPBF
Manufacturer	International Rectifier
File Size	332.31 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP4066DPBF Datasheet
Additional preview pages of the IRGP4066DPBF datasheet.

IRGP4066DPBF Product details

Features

Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution Lead Free Package C IRGP4066DPbF IRGP4066D-EPbF VCES = 600V IC(Nominal) = 75A G E tSC ≥ 5μs, TJ(max) = 175°C n-channel VCE(on) typ. = 1.70V Benefits.
High Efficie.

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Published: Feb 5, 2014 |