IRGP4062DPBF - INSULATED GATE BIPOLAR TRANSISTOR

This page provides the datasheet information for the IRGP4062DPBF, a member of the IRGB4062DPBF INSULATED GATE BIPOLAR TRANSISTOR family.

Product Overview

International Rectifier

Part number	IRGP4062DPBF
Manufacturer	International Rectifier
File Size	430.21 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP4062DPBF Datasheet
Additional preview pages of the IRGP4062DPBF datasheet.

C.
Low VCE (ON) Trench IGBT Technology.
Low switching losses.
Maximum Junction temperature 175 °C.
5 μS short circuit SOA.
Square RBSOA G.
100% of the parts tested for ILM .
Positive VCE (ON) Temperature co-efficient.
Ultra fast soft Recovery Co-Pak Diode E n-channel.
Tight parameter distribution.
Lead Free Package C VCES = 600V IC = 24A, TC = 100°C tSC 5μs, TJ(max) = 175°C VCE(on) typ. = 1.65.

Other Datasheets by International Rectifier

Published: Nov 22, 2006 |