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IRGP4062DPBF - INSULATED GATE BIPOLAR TRANSISTOR

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International Rectifier

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IRGP4062DPBF INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRGP4062DPBF

Datasheet Details

Part number	IRGP4062DPBF
Manufacturer	International Rectifier
File Size	430.21 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP4062DPBF Datasheet
Note	This datasheet PDF includes multiple part numbers: IRGP4062DPBF, IRGB4062DPBF. Please refer to the document for exact specifications by model.
Additional preview pages of the IRGP4062DPBF datasheet.

Product details

Features

C.
Low VCE (ON) Trench IGBT Technology.
Low switching losses.
Maximum Junction temperature 175 °C.
5 μS short circuit SOA.
Square RBSOA G.
100% of the parts tested for ILM .
Positive VCE (ON) Temperature co-efficient.
Ultra fast soft Recovery Co-Pak Diode E n-channel.
Tight parameter distribution.
Lead Free Package C VCES = 600V IC = 24A, TC = 100°C tSC 5μs, TJ(max) = 175°C VCE(on) typ. = 1.65.

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Published: Nov 22, 2006 |