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IRGP4069-EPbF - INSULATED GATE BIPOLAR TRANSISTOR

This page provides the datasheet information for the IRGP4069-EPbF, a member of the IRGP4069PbF INSULATED GATE BIPOLAR TRANSISTOR family.

Features

  • Low VCE (ON) Trench IGBT Technology.
  • Low Switching Losses.
  • Maximum Junction Temperature 175 °C.
  • 5 μS short circuit SOA.
  • Square RBSOA.
  • 100% of The Parts Tested for ILM.
  • Positive VCE (ON) Temperature Coefficient.
  • Tight Parameter Distribution.
  • Lead Free Package PD - 97426 IRGP4069PbF IRGP4069-EPbF C G E n-channel VCES = 600V IC(Nominal) = 35A tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.6V Benefits.
  • High E.

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Full PDF Text Transcription

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INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (ON) Temperature Coefficient • Tight Parameter Distribution • Lead Free Package PD - 97426 IRGP4069PbF IRGP4069-EPbF C G E n-channel VCES = 600V IC(Nominal) = 35A tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.
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