Download the IRGP4069-EPbF datasheet PDF.
This datasheet also covers the IRGP4069PbF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.
Key Features
Low VCE (ON) Trench IGBT Technology.
Low Switching Losses.
Maximum Junction Temperature 175 °C.
5 μS short circuit SOA.
Square RBSOA.
100% of The Parts Tested for ILM.
Positive VCE (ON) Temperature Coefficient.
Tight Parameter Distribution.
Lead Free Package
PD - 97426
IRGP4069PbF IRGP4069-EPbF
C
G E
n-channel
VCES = 600V IC(Nominal) = 35A tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.6V
Benefits.
Note: The manufacturer provides a single datasheet file (IRGP4069PbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for IRGP4069-EPbF (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRGP4069-EPbF. For precise diagrams, and layout, please refer to the original PDF.
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 5 μS short circuit SOA • S...
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ses • Maximum Junction Temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (ON) Temperature Coefficient • Tight Parameter Distribution • Lead Free Package PD - 97426 IRGP4069PbF IRGP4069-EPbF C G E n-channel VCES = 600V IC(Nominal) = 35A tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.
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IRGP4069-EPbF Datasheet
