IRGP4069-EPbF Overview
INSULATED GATE BIPOLAR TRANSISTOR.
IRGP4069-EPbF Key Features
- Low VCE (ON) Trench IGBT Technology
- Low Switching Losses
- Maximum Junction Temperature 175 °C
- 5 μS short circuit SOA
- Square RBSOA
- 100% of The Parts Tested for ILM
- Positive VCE (ON) Temperature Coefficient
- Tight Parameter Distribution
- Lead Free Package
IRGP4069-EPbF Applications
- Suitable for a Wide Range of Switching Frequencies due to
- Rugged Transient Performance for Increased Reliability
- Excellent Current Sharing in Parallel Operation