IRGP4069D-EPbF
Features
- Low VCE (ON) Trench IGBT Technology
- Low Switching Losses
- Maximum Junction Temperature 175 °C
- 5 μS short circuit SOA
- Square RBSOA
- 100% of The Parts Tested for ILM
- Positive VCE (ON) Temperature Coefficient
- Tight Parameter Distribution
- Lead Free Package
G E n-channel
VCES = 600V IC(Nominal) = 35A t SC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.6V
Benefits
- High Efficiency in a Wide Range of Applications
- Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
- Rugged Transient Performance for Increased Reliability
- Excellent Current Sharing in Parallel Operation
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL
IF @ TC = 25°C IF @ TC = 100°C IFM VGE
Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Nominal Current Pulse Collector Current, VGE = 15V c Clamped Inductive Load Current, VGE = 20V
Diode Continous Forward Current Diode Continous...
