Full PDF Text Transcription for IRGP4069PbF (Reference)
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IRGP4069PbF. For precise diagrams, and layout, please refer to the original PDF.
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 5 μS short circuit SOA • S...
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ses • Maximum Junction Temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (ON) Temperature Coefficient • Tight Parameter Distribution • Lead Free Package PD - 97426 IRGP4069PbF IRGP4069-EPbF C G E n-channel VCES = 600V IC(Nominal) = 35A tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.
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IRGP4069PbF Datasheet
