Datasheet Summary
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- 97222
PDP TRENCH IGBT
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package
Key Parameters
300 1.70 270 150 V V A °C
VCE min VCE(ON) typ. @ 110A IRP max @ TC= 25°C c TJ max
E n-channel
G Gate C Collector
TO-247AC
E Emitter
Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area...