IRGP4055DPBF Overview
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.
IRGP4055DPBF datasheet by International Rectifier (now Infineon).
| Part number | IRGP4055DPBF |
|---|---|
| Datasheet | IRGP4055DPBF_InternationalRectifier.pdf |
| File Size | 290.06 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | PDP TRENCH IGBT |
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This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.
View all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| IRGP4062-EPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGP4062D-EPbF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGP4062DPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGP4063-EPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGP4063D-EPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGP4063D1-EPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGP4063D1PBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGP4063DPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGP4063PBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGP4065DPBF | PDP TRENCH IGBT |