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IRGP20B120U-E Datasheet - IRF

IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR

IRGP20B120U-E Features

* UltraFast Non Punch Through (NPT) Technology

* 10 µs Short Circuit capability

* Square RBSOA

* Positive VCE(on) Temperature Coefficient

* Extended lead TO-247 package UltraFast IGBT C VCES = 1200V G E VCE(on) typ. = 3.05V VGE = 15V, IC = 20A, 25°C Benefi

IRGP20B120U-E_IRF.pdf

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Datasheet Details

Part number:

IRGP20B120U-E

Manufacturer:

IRF

File Size:

106.35 KB

Description:

Insulated gate bipolar transistor.

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