Datasheet Details
- Part number
- IRGP20B120U-E
- Manufacturer
- IRF
- File Size
- 106.35 KB
- Datasheet
- IRGP20B120U-E_IRF.pdf
- Description
- INSULATED GATE BIPOLAR TRANSISTOR
IRGP20B120U-E Description
PD- 94117 IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR .
IRGP20B120U-E Features
* UltraFast Non Punch Through (NPT) Technology
* 10 µs Short Circuit capability
* Square RBSOA
* Positive VCE(on) Temperature Coefficient
* Extended lead TO-247 package
UltraFast IGBT
C
VCES = 1200V
G E
VCE(on) typ. = 3.05V
VGE = 15V, IC = 20A, 25°C
Benefi
IRGP20B120U-E Applications
* Rugged with UltraFast performance
* Low EMI
* Significantly Less Snubber required
* Excellent Current sharing in Parallel operation
* Longer leads for easier mounting
n-channel
TO-247AD
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°
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