IRGP30B60KD-EP Datasheet, Transistor, International Rectifier

IRGP30B60KD-EP Features

• Transistor
• Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA

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Part number:

IRGP30B60KD-EP

Manufacturer:

International Rectifier

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296.84kb

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📄 Datasheet

Description:

Insulated gate bipolar transistor.

IRGP30B60KD-EP Application

• Applications 0001 0.001 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 25. M

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IRGP30B60KD-EP

International Rectifier

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