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IRGP30B60KD-EP

INSULATED GATE BIPOLAR TRANSISTOR

IRGP30B60KD-EP Features

* Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. TO-247AD Package Lea

IRGP30B60KD-EP Datasheet (296.84 KB)

Preview of IRGP30B60KD-EP PDF

Datasheet Details

Part number:

IRGP30B60KD-EP

Manufacturer:

International Rectifier

File Size:

296.84 KB

Description:

Insulated gate bipolar transistor.

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IRGP30B60KD-EP INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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