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IRGP30B60KD-EP - INSULATED GATE BIPOLAR TRANSISTOR

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International Rectifier

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IRGP30B60KD-EP INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRGP30B60KD-EP

Datasheet Details

Part number	IRGP30B60KD-EP
Manufacturer	International Rectifier
File Size	296.84 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP30B60KD-EP Datasheet
Additional preview pages of the IRGP30B60KD-EP datasheet.

Product details

Features

Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. TO-247AD Package Lead-Free C VCES = 600V IC = 30A, TC=100°C G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.95V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.

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Published: Mar 31, 2014 |