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IRGP30B60KD-E

INSULATED GATE BIPOLAR TRANSISTOR

IRGP30B60KD-E Features

* Low VCE (on) Non Punch Through IGBT Technology.

* Low Diode VF.

* 10µs Short Circuit Capability.

* Square RBSOA.

* Ultrasoft Diode Reverse Recovery Characteristics.

* Positive VCE (on) Temperature Coefficient.

* TO-247AD Package Benefits

IRGP30B60KD-E Datasheet (263.30 KB)

Preview of IRGP30B60KD-E PDF

Datasheet Details

Part number:

IRGP30B60KD-E

Manufacturer:

IRF

File Size:

263.30 KB

Description:

Insulated gate bipolar transistor.

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TAGS

IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR IRF

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