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IRGP20B120U-EP Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

IRGP20B120U-EP Features

* • UltraFast Non Punch Through (NPT) Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package • Lead-Free UltraFast IGBT C VCES = 1200V G E VCE(on) typ. = 3.05V VGE = 15V, IC = 20A, 25°C Benefits • Benchmark efficiency ab

IRGP20B120U-EP Datasheet (214.79 KB)

Preview of IRGP20B120U-EP PDF

Datasheet Details

Part number:

IRGP20B120U-EP

Manufacturer:

International Rectifier

File Size:

214.79 KB

Description:

Insulated gate bipolar transistor.

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IRGP20B120U-EP INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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