IRGP20B120U-EP - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

International Rectifier

Part number	IRGP20B120U-EP
Manufacturer	International Rectifier
File Size	214.79 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP20B120U-EP Datasheet
Additional preview pages of the IRGP20B120U-EP datasheet.

UltraFast Non Punch Through (NPT) Technology 10 µs Short Circuit capability Square RBSOA Positive VCE(on) Temperature Coefficient Extended lead TO-247 package Lead-Free UltraFast IGBT C VCES = 1200V G E VCE(on) typ. = 3.05V VGE = 15V, IC = 20A, 25°C Benefits Benchmark efficiency above 20KHz Optimized for Welding, UPS, and Induction Heating.

📁 Similar Datasheet

Other Datasheets by International Rectifier

Published: Aug 17, 2007 |