IRGP6630DPbF Datasheet, Transistor, International Rectifier

IRGP6630DPbF Features

• Transistor Low VCE(ON) and Switching Losses Optimized Diode for Full Bridge Hard Switch Converters Square RBSOA and Maximum Temperature of 175°C 5µs Short Circuit Positive VCE (ON) Temperature Co-

PDF File Details

Part number:

IRGP6630DPbF

Manufacturer:

International Rectifier

File Size:

673.85kb

Download:

📄 Datasheet

Description:

Insulated gate bipolar transistor.

IRGP6630DPbF Application

• Applications
•  Welding
•  H Bridge Converters G E n-channel G Gate E C G IRGP6630DPbF  TO‐247AC  C Collector GCE IRGP6630D‐EPbF 

TAGS

IRGP6630DPbF

International Rectifier

📁 Related Datasheet

IRGP6630D-EPbF - Insulated Gate Bipolar Transistor (International Rectifier)
  VCES = 600V IC = 30A, TC =100°C IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  C C tSC .

IRGP6650D-EPbF - Insulated Gate Bipolar Transistor (International Rectifier)
  VCES = 600V IC = 50A, TC =100°C IRGP6650DPbF IRGP6650D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  C C tSC .

IRGP6650DPBF - Insulated Gate Bipolar Transistor (International Rectifier)
  VCES = 600V IC = 50A, TC =100°C IRGP6650DPbF IRGP6650D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  C C tSC .

IRGP6660D-EPbF - Insulated Gate Bipolar Transistor (International Rectifier)
VCES = 600V IC = 60A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A Applications • Welding • H Bridge Converters IRGP6660DPbF I.

IRGP6660DPBF - Insulated Gate Bipolar Transistor (International Rectifier)
VCES = 600V IC = 60A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A Applications • Welding • H Bridge Converters IRGP6660DPbF I.

IRGP6690D-EPbF - Insulated Gate Bipolar Transistor (International Rectifier)
VCES = 600V IC = 90A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 75A Applications • Welding • H Bridge Converters IRGP6690DPbF .

IRGP6690DPbF - Insulated Gate Bipolar Transistor (International Rectifier)
VCES = 600V IC = 90A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 75A Applications • Welding • H Bridge Converters IRGP6690DPbF .

IRGP20B120U-E - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
PD- 94117 IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast Non Punch Through (NPT) Technology • 10 µs Short Circuit capability • .

IRGP20B120U-EP - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
.. PD- 95897 IRGP20B120U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast Non Punch Through (NPT) Technology • 10 µs Short .

IRGP20B120UD-E - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
PD- 93817 IRGP20B120UD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast Non Punch Through (NPT) Technology.