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IRGP6630DPbF

Insulated Gate Bipolar Transistor

IRGP6630DPbF Features

* Low VCE(ON) and Switching Losses Optimized Diode for Full Bridge Hard Switch Converters Square RBSOA and Maximum Temperature of 175°C 5µs Short Circuit Positive VCE (ON) Temperature Co-efficient Lead-free, RoHS compliant Benefits High Efficiency in a Wide Range of Applications Optimized for Welding

IRGP6630DPbF Datasheet (673.85 KB)

Preview of IRGP6630DPbF PDF

Datasheet Details

Part number:

IRGP6630DPbF

Manufacturer:

International Rectifier

File Size:

673.85 KB

Description:

Insulated gate bipolar transistor.
  VCES = 600V IC = 30A, TC =100°C IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  C C tSC .

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IRGP6630DPbF Insulated Gate Bipolar Transistor International Rectifier

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