* Low VCE(ON) and Switching Losses Optimized Diode for Full Bridge Hard Switch Converters Square RBSOA and Maximum Temperature of 175°C 5µs Short Circuit Positive VCE (ON) Temperature Co-efficient Lead-free, RoHS compliant Benefits High Efficiency in a Wide Range of Applications Optimized for Welding
IRGP6650D-EPbF Datasheet (662.81 KB)
IRGP6650D-EPbF
International Rectifier
662.81 KB
Insulated gate bipolar transistor.
VCES = 600V IC = 50A, TC =100°C
IRGP6650DPbF IRGP6650D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C C
C
tSC .
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