IRGP6650DPBF
International Rectifier
662.81kb
Insulated gate bipolar transistor.
TAGS
📁 Related Datasheet
IRGP6650D-EPbF - Insulated Gate Bipolar Transistor
(International Rectifier)
VCES = 600V IC = 50A, TC =100°C
IRGP6650DPbF IRGP6650D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C C
C
tSC .
IRGP6630D-EPbF - Insulated Gate Bipolar Transistor
(International Rectifier)
VCES = 600V IC = 30A, TC =100°C
IRGP6630DPbF IRGP6630D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C C
C
tSC .
IRGP6630DPbF - Insulated Gate Bipolar Transistor
(International Rectifier)
VCES = 600V IC = 30A, TC =100°C
IRGP6630DPbF IRGP6630D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C C
C
tSC .
IRGP6660D-EPbF - Insulated Gate Bipolar Transistor
(International Rectifier)
VCES = 600V
IC = 60A, TC =100°C
tSC ≥ 5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 48A
Applications • Welding • H Bridge Converters
IRGP6660DPbF I.
IRGP6660DPBF - Insulated Gate Bipolar Transistor
(International Rectifier)
VCES = 600V
IC = 60A, TC =100°C
tSC ≥ 5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 48A
Applications • Welding • H Bridge Converters
IRGP6660DPbF I.
IRGP6690D-EPbF - Insulated Gate Bipolar Transistor
(International Rectifier)
VCES = 600V
IC = 90A, TC =100°C
tSC ≥ 5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.65V @ IC = 75A
Applications • Welding • H Bridge Converters
IRGP6690DPbF .
IRGP6690DPbF - Insulated Gate Bipolar Transistor
(International Rectifier)
VCES = 600V
IC = 90A, TC =100°C
tSC ≥ 5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.65V @ IC = 75A
Applications • Welding • H Bridge Converters
IRGP6690DPbF .
IRGP20B120U-E - INSULATED GATE BIPOLAR TRANSISTOR
(IRF)
PD- 94117
IRGP20B120U-E
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast Non Punch Through (NPT) Technology • 10 µs Short Circuit capability • .
IRGP20B120U-EP - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
..
PD- 95897
IRGP20B120U-EP
INSULATED GATE BIPOLAR TRANSISTOR
Features
UltraFast Non Punch Through (NPT) Technology 10 µs Short .
IRGP20B120UD-E - INSULATED GATE BIPOLAR TRANSISTOR
(IRF)
PD- 93817
IRGP20B120UD-E
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast Non Punch Through (NPT) Technology.