* Low VCE(ON) and switching losses Optimized diode for full bridge hard switch converters Square RBSOA and maximum junction temperature 175°C 5µs short circuit SOA Positive VCE (ON) temperature coefficient Lead-free, RoHS compliant Benefits High efficiency in a wide range of applications Optimized fo
IRGP6690D-EPbF Datasheet (637.51 KB)
IRGP6690D-EPbF
International Rectifier
637.51 KB
Insulated gate bipolar transistor.
VCES = 600V
IC = 90A, TC =100°C
tSC ≥ 5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.65V @ IC = 75A
Applications
* Welding
* H Bridge Converter.
📁 Related Datasheet
IRGP6690DPbF Insulated Gate Bipolar Transistor (International Rectifier)
IRGP6630D-EPbF Insulated Gate Bipolar Transistor (International Rectifier)
IRGP6630DPbF Insulated Gate Bipolar Transistor (International Rectifier)
IRGP6650D-EPbF Insulated Gate Bipolar Transistor (International Rectifier)
IRGP6650DPBF Insulated Gate Bipolar Transistor (International Rectifier)
IRGP6660D-EPbF Insulated Gate Bipolar Transistor (International Rectifier)
IRGP6660DPBF Insulated Gate Bipolar Transistor (International Rectifier)
IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRGP20B120U-EP INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGP20B120UD-E INSULATED GATE BIPOLAR TRANSISTOR (IRF)
