IRGP6660D-EPbF Features
* Low VCE(ON) and switching losses Optimized diode for full bridge hard switch converters Square RBSOA and maximum junction temperature 175°C 5µs short circuit SOA Positive VCE (ON) temperature coefficient Lead-free, RoHS compliant Benefits High efficiency in a wide range of applications Optimized fo
IRGP6660DPBF-InternationalRectifier.pdf
Datasheet Details
IRGP6660D-EPbF, IRGP6660DPBF
International Rectifier
654.02 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: IRGP6660D-EPbF, IRGP6660DPBF.
Please refer to the document for exact specifications by model.
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IRGP6660D-EPbF Distributor
