* Low VCE(ON) and switching losses Optimized diode for full bridge hard switch converters Square RBSOA and maximum junction temperature 175°C 5µs short circuit SOA Positive VCE (ON) temperature coefficient Lead-free, RoHS compliant Benefits High efficiency in a wide range of applications Optimized fo
IRGP6660D-EPbF Datasheet (654.02 KB)
IRGP6660D-EPbF
International Rectifier
654.02 KB
Insulated gate bipolar transistor.
VCES = 600V
IC = 60A, TC =100°C
tSC ≥ 5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 48A
Applications
* Welding
* H Bridge Converters.
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