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IRGP6660DPBF Insulated Gate Bipolar Transistor

IRGP6660DPBF Description

VCES = 600V IC = 60A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ.= 1.7V @ IC = 48A Applications * Welding * H Bridge Converters.

IRGP6660DPBF Applications

* Welding

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