IRGP6660D-EPbF Datasheet | Specifications & PDF Download

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IRGP6660D-EPbF Insulated Gate Bipolar Transistor

VCES = 600V IC = 60A, TC =100°C tSC ≥ 5µs, TJ(.

International Rectifier

IRGP6660D-EPbF - Insulated Gate Bipolar Transistor

VCES = 600V IC = 60A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A Applications • Welding • H Bridge Converters IRGP6660DPbF I.
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