IRGP6660D-EPbF Datasheet, Features, Application
IRGP6660D-EPbF Insulated Gate Bipolar Transistor
VCES = 600V IC = 60A, TC =100°C tSC ≥ 5µs, TJ(.
International Rectifier
1
IRGP6660D-EPbF - Insulated Gate Bipolar Transistor
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