VCES = 600V IC = 60A, TC =100°C tSC ≥ 5µs, TJ(.
IRGP6660D-EPbF - Insulated Gate Bipolar Transistor
VCES = 600V IC = 60A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A Applications • Welding • H Bridge Converters IRGP6660DPbF I.