IRGP6660D-EPbF Datasheet – Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

International Rectifier (now Infineon)

Download the IRGP6660D-EPbF datasheet PDF. This datasheet also includes the IRGP6660DPBF variant, as both parts are published together in a single manufacturer document.

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IRGP6660D-EPbF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IRGP6660DPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IRGP6660D-EPbF
Manufacturer	International Rectifier (now Infineon)
File Size	654.02 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGP6660D-EPbF Datasheet

Overview

VCES = 600V IC = 60A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ.

= 1.

Key Features

Low VCE(ON) and switching losses Optimized diode for full bridge hard switch converters Square RBSOA and maximum junction temperature 175°C 5µs short circuit SOA Positive VCE (ON) temperature coefficient Lead-free, RoHS compliant Benefits High efficiency in a wide range of.

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRGP6660DPBF	Insulated Gate Bipolar Transistor
IRGP6630D-EPbF	Insulated Gate Bipolar Transistor
IRGP6630DPbF	Insulated Gate Bipolar Transistor
IRGP6650D-EPbF	Insulated Gate Bipolar Transistor
IRGP6650DPBF	Insulated Gate Bipolar Transistor
IRGP6690D-EPbF	Insulated Gate Bipolar Transistor
IRGP6690DPbF	Insulated Gate Bipolar Transistor
IRGP20B120U-EP	INSULATED GATE BIPOLAR TRANSISTOR
IRGP20B120UD-EP	insulated gate bipolar transistor
IRGP20B60PDPBF	WARP2 SERIES IGBT