IRGP6630DPbF
IRGP6630DPbF is Insulated Gate Bipolar Transistor manufactured by International Rectifier.
Features
Low VCE(ON) and Switching Losses Optimized Diode for Full Bridge Hard Switch Converters
Square RBSOA and Maximum Temperature of 175°C
5µs Short Circuit Positive VCE (ON) Temperature Co-efficient Lead-free, Ro HS pliant
Benefits
High Efficiency in a Wide Range of Applications
Optimized for Welding and H Bridge Converters Improved Reliability due to Rugged Hard Switching Performance and High Power Capability Enables Short Circuit Protection Operation Excellent Current Sharing in Parallel Operation Environmentally friendly
Base part number
IRGP6630DPb F IRGP6630D-EPb F
Package Type
TO-247AC TO-247AD
Standard Pack
Form
Quantity
Tube
Tube
Orderable Part Number
IRGP6630DPb F IRGP6630D-EPb F
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C
IC @ TC = 100°C
ICM ILM IFRM @ TC = 100°C
Collector-to-Emitter Voltage Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Repetitive Peak Forward Current-
PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw
Max. 600 47
30 54 72 15
±20 192 96 -40 to +175
300 (0.063 in. (1.6mm) from case) 10 lbf- in (1.1 N- m)
Units V
V W °C
Thermal...