Download IRGP6630DPbF Datasheet PDF
International Rectifier
IRGP6630DPbF
IRGP6630DPbF is Insulated Gate Bipolar Transistor manufactured by International Rectifier.
Features Low VCE(ON) and Switching Losses Optimized Diode for Full Bridge Hard Switch Converters Square RBSOA and Maximum Temperature of 175°C 5µs Short Circuit Positive VCE (ON) Temperature Co-efficient Lead-free, Ro HS pliant Benefits High Efficiency in a Wide Range of Applications Optimized for Welding and H Bridge Converters Improved Reliability due to Rugged Hard Switching Performance and High Power Capability Enables Short Circuit Protection Operation Excellent Current Sharing in Parallel Operation Environmentally friendly Base part number IRGP6630DPb F IRGP6630D-EPb F Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube Tube Orderable Part Number IRGP6630DPb F IRGP6630D-EPb F Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IFRM @ TC = 100°C Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V  Diode Repetitive Peak Forward Current-  PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. 600 47 30 54 72 15 ±20 192 96 -40 to +175 300 (0.063 in. (1.6mm) from case) 10 lbf- in (1.1 N- m) Units V V W °C     Thermal...