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IRGP6630D-EPbF - Insulated Gate Bipolar Transistor

This page provides the datasheet information for the IRGP6630D-EPbF, a member of the IRGP6630DPbF Insulated Gate Bipolar Transistor family.

Product Overview

International Rectifier

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IRGP6630D-EPbF Insulated Gate Bipolar Transistor by International Rectifier - Datasheet Preview — Datasheet preview – IRGP6630D-EPbF

Datasheet Details

Part number	IRGP6630D-EPbF
Manufacturer	International Rectifier
File Size	673.85 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGP6630D-EPbF Datasheet
Additional preview pages of the IRGP6630D-EPbF datasheet.

IRGP6630D-EPbF Product details

Features

Low VCE(ON) and Switching Losses Optimized Diode for Full Bridge Hard Switch Converters Square RBSOA and Maximum Temperature of 175°C 5µs Short Circuit Positive VCE (ON) Temperature Co-efficient Lead-free, RoHS compliant Benefits High Efficiency in a Wide Range of.

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Published: Nov 12, 2014 |