IRGP6630D-EPbF datasheet by International Rectifier (now Infineon).
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | IRGP6630D-EPbF |
|---|---|
| Datasheet | IRGP6630D-EPbF IRGP6630DPbF Datasheet (PDF) |
| File Size | 673.85 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | Insulated Gate Bipolar Transistor |
|
|
VCES = 600V IC = 30A, TC =100°C IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A Applications Welding H Bridge Converters G E n-channel G Gate E C G IRGP6630DPbF TO‐247AC C Collector GCE IRGP6630D‐EPbF TO‐247AD E Emitter.
View all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| IRGP6630DPbF | Insulated Gate Bipolar Transistor |
| IRGP6650D-EPbF | Insulated Gate Bipolar Transistor |
| IRGP6650DPBF | Insulated Gate Bipolar Transistor |
| IRGP6660D-EPbF | Insulated Gate Bipolar Transistor |
| IRGP6660DPBF | Insulated Gate Bipolar Transistor |
| IRGP6690D-EPbF | Insulated Gate Bipolar Transistor |
| IRGP6690DPbF | Insulated Gate Bipolar Transistor |
| IRGP20B120U-EP | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGP20B120UD-EP | insulated gate bipolar transistor |
| IRGP20B60PDPBF | WARP2 SERIES IGBT |
