IRGP6650D-EPbF
IRGP6650D-EPbF is Insulated Gate Bipolar Transistor manufactured by International Rectifier.
- Part of the IRGP6650DPBF comparator family.
- Part of the IRGP6650DPBF comparator family.
Features
Low VCE(ON) and Switching Losses Optimized Diode for Full Bridge Hard Switch Converters
Square RBSOA and Maximum Temperature of 175°C
5µs Short Circuit Positive VCE (ON) Temperature Co-efficient Lead-free, Ro HS pliant
Benefits
High Efficiency in a Wide Range of Applications
Optimized for Welding and H Bridge Converters Improved Reliability due to Rugged Hard Switching Performance and High Power Capability Enables Short Circuit Protection Operation Excellent Current Sharing in Parallel Operation Environmentally friendly
Base part number
IRGP6650DPb F IRGP6650D-EPb F
Package Type
TO-247AC TO-247AD
Standard Pack
Form
Quantity
Tube
Tube
Orderable Part Number
IRGP6650DPb F IRGP6650D-EPb F
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM
Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V
IFRM @ TC = 100°C
PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Diode Repetitive Peak Forward Current-
Diode Maximum Forward Current
- Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw
Max. 600 80 50 105 140
25 140 ±20 306 153 -40 to +175
300 (0.063 in. (1.6mm) from case) 10 lbf- in (1.1 N- m)
Units V
V W °C
Thermal Resistance
Parameter...