IRGP6650D-EPbF Overview
VCES = 600V IC = 50A, TC =100°C IRGP6650DPbF IRGP6650D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 35A Applications Welding H Bridge Converters G E n-channel G Gate E C G IRGP6650DPbF TO‐247AC C Collector GCE IRGP6650D‐EPbF TO‐247AD E Emitter.