Download IRGP6650DPBF Datasheet PDF
International Rectifier
IRGP6650DPBF
IRGP6650DPBF is Insulated Gate Bipolar Transistor manufactured by International Rectifier.
Features Low VCE(ON) and Switching Losses Optimized Diode for Full Bridge Hard Switch Converters Square RBSOA and Maximum Temperature of 175°C 5µs Short Circuit Positive VCE (ON) Temperature Co-efficient Lead-free, Ro HS pliant Benefits High Efficiency in a Wide Range of Applications Optimized for Welding and H Bridge Converters Improved Reliability due to Rugged Hard Switching Performance and High Power Capability Enables Short Circuit Protection Operation Excellent Current Sharing in Parallel Operation Environmentally friendly Base part number IRGP6650DPb F IRGP6650D-EPb F Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube Tube Orderable Part Number IRGP6650DPb F IRGP6650D-EPb F Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V  IFRM @ TC = 100°C PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Diode Repetitive Peak Forward Current-  Diode Maximum Forward Current - Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. 600 80 50 105 140 25 140 ±20 306 153 -40 to +175 300 (0.063 in. (1.6mm) from case) 10 lbf- in (1.1 N- m) Units V V W °C     Thermal Resistance Parameter...