Download IRGP6660D-EPbF Datasheet PDF
International Rectifier
IRGP6660D-EPbF
IRGP6660D-EPbF is Insulated Gate Bipolar Transistor manufactured by International Rectifier.
- Part of the IRGP6660DPBF comparator family.
Features Low VCE(ON) and switching losses Optimized diode for full bridge hard switch converters Square RBSOA and maximum junction temperature 175°C 5µs short circuit SOA Positive VCE (ON) temperature coefficient Lead-free, Ro HS pliant Benefits High efficiency in a wide range of applications Optimized for welding and H bridge converters Improved reliability due to rugged hard switching performance and higher power capability Enables short circuit protection scheme Excellent current sharing in parallel operation Environmentally friendly Base part number IRGP6660DPBF IRGP6660D-EPBF Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube Tube Orderable Part Number IRGP6660DPBF IRGP6660D-EPBF Absolute Maximum Ratings Parameter Max. VCES Collector-to-Emitter Voltage IC @ TC = 25°C Continuous Collector Current IC @ TC = 100°C ICM Continuous Collector Current Pulse Collector Current, VGE = 15V 60 144 ILM Clamped Inductive Load Current, VGE = 20V  IFRM @ TC = 100°C Diode Repetitive Peak Forward Current-  192 30 IFM Diode Maximum Forward Current - VGE Continuous Gate-to-Emitter Voltage 192 ±20 PD @ TC = 25°C Maximum Power Dissipation PD @ TC = 100°C Maximum Power...