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IRGP6660D-EPbF - Insulated Gate Bipolar Transistor

This page provides the datasheet information for the IRGP6660D-EPbF, a member of the IRGP6660DPBF Insulated Gate Bipolar Transistor family.

Product Overview

International Rectifier

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IRGP6660D-EPbF Insulated Gate Bipolar Transistor by International Rectifier - Datasheet Preview — Datasheet preview – IRGP6660D-EPbF

Datasheet Details

Part number	IRGP6660D-EPbF
Manufacturer	International Rectifier
File Size	654.02 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGP6660D-EPbF Datasheet
Additional preview pages of the IRGP6660D-EPbF datasheet.

IRGP6660D-EPbF Product details

Features

Low VCE(ON) and switching losses Optimized diode for full bridge hard switch converters Square RBSOA and maximum junction temperature 175°C 5µs short circuit SOA Positive VCE (ON) temperature coefficient Lead-free, RoHS compliant Benefits High efficiency in a wide range of.

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Published: Feb 16, 2016 |