IRGP6660D-EPbF
IRGP6660D-EPbF is Insulated Gate Bipolar Transistor manufactured by International Rectifier.
- Part of the IRGP6660DPBF comparator family.
- Part of the IRGP6660DPBF comparator family.
Features
Low VCE(ON) and switching losses Optimized diode for full bridge hard switch converters
Square RBSOA and maximum junction temperature 175°C
5µs short circuit SOA Positive VCE (ON) temperature coefficient Lead-free, Ro HS pliant
Benefits High efficiency in a wide range of applications Optimized for welding and H bridge converters Improved reliability due to rugged hard switching performance and higher power capability
Enables short circuit protection scheme Excellent current sharing in parallel operation Environmentally friendly
Base part number
IRGP6660DPBF IRGP6660D-EPBF
Package Type
TO-247AC TO-247AD
Standard Pack
Form
Quantity
Tube
Tube
Orderable Part Number
IRGP6660DPBF IRGP6660D-EPBF
Absolute Maximum Ratings
Parameter
Max.
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
Continuous Collector Current
IC @ TC = 100°C ICM
Continuous Collector Current Pulse Collector Current, VGE = 15V
60 144
ILM Clamped Inductive Load Current, VGE = 20V IFRM @ TC = 100°C Diode Repetitive Peak Forward Current-
192 30
IFM Diode Maximum Forward Current
- VGE Continuous Gate-to-Emitter Voltage
192 ±20
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power...