
IRGP6660DPBF - Insulated Gate Bipolar Transistor
VCES = 600V
IC = 60A, TC =100°C
tSC ≥ 5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 48A
Applications • Welding • H Bridge Converters
IRGP6660DPbF I
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VCES = 600V IC = 60A, TC =100°C tSC ≥ 5µs, TJ(.
IRGP6660DPBF Distributor