IRGP6660DPBF Datasheet | Specifications & PDF Download
IRGP6660DPBF Insulated Gate Bipolar Transistor
VCES = 600V IC = 60A, TC =100°C tSC ≥ 5µs, TJ(.
International Rectifier
IRGP6660DPBF - Insulated Gate Bipolar Transistor
VCES = 600V IC = 60A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A Applications • Welding • H Bridge Converters IRGP6660DPbF I.
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