IRGP6690D-EPbF Datasheet | Specifications & PDF Download

IRGP6690D-EPbF Insulated Gate Bipolar Transistor

VCES = 600V IC = 90A, TC =100°C tSC ≥ 5µs, TJ(.

VCES = 600V IC = 90A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 75A Applications • Welding • H Bridge Converters IRGP6690DPbF

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