
IRGPS66160DPBF - Insulated Gate Bipolar Transistor
IRGPS66160DPbF
VCES = 600V IC = 160A, TC =100°C
tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 120A
Applications Welding H Bridge Con
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