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IRGPS66160DPBF Datasheet - International Rectifier

Insulated Gate Bipolar Transistor

IRGPS66160DPBF Features

* Low VCE(ON) and Switching Losses Optimized Diode for Full Bridge Hard Switch Converters Square RBSOA and Maximum Temperature of 175°C 5µs Short Circuit Positive VCE (ON) Temperature Co-efficient Lead-free, RoHS compliant Benefits High Efficiency in a Wide Range of Applications Optimized for Welding

IRGPS66160DPBF Datasheet (641.21 KB)

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Datasheet Details

Part number:

IRGPS66160DPBF

Manufacturer:

International Rectifier

File Size:

641.21 KB

Description:

Insulated gate bipolar transistor.
  IRGPS66160DPbF VCES = 600V IC = 160A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 120A Applications  Welding  H Br.

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IRGPS66160DPBF Insulated Gate Bipolar Transistor International Rectifier

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