IRGPS4067DPBF - INSULATED GATE BIPOLAR TRANSISTOR
IRGPS4067DPBF Features
* Low VCE (on) Trench IGBT Technology Low Switching Losses 5μs SCSOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free, RoHS
