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IRGPS4067DPBF

INSULATED GATE BIPOLAR TRANSISTOR

IRGPS4067DPBF Features

* Low VCE (on) Trench IGBT Technology Low Switching Losses 5μs SCSOA Square RBSOA 100% of The Parts Tested for ILM  Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free, RoHS

IRGPS4067DPBF Datasheet (335.48 KB)

Preview of IRGPS4067DPBF PDF

Datasheet Details

Part number:

IRGPS4067DPBF

Manufacturer:

International Rectifier

File Size:

335.48 KB

Description:

Insulated gate bipolar transistor.

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IRGPS4067DPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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