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IRGPS40B120U

INSULATED GATE BIPOLAR TRANSISTOR

IRGPS40B120U Features

* Non Punch Through IGBT Technology.

* 10µs Short Circuit Capability.

* Square RBSOA.

* Positive VCE (on) Temperature Coefficient.

* Super-247 Package. VCES = 1200V VCE(on) typ. = 3.12V G E @ VGE = 15V, N-channel Benefits

* Benchmark Efficiency for

IRGPS40B120U Datasheet (116.79 KB)

Preview of IRGPS40B120U PDF

Datasheet Details

Part number:

IRGPS40B120U

Manufacturer:

IRF

File Size:

116.79 KB

Description:

Insulated gate bipolar transistor.

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IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR IRF

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