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IRGPS40B120UDP - Insulated Gate Bipolar Transistor

International Rectifier

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Datasheet Details

Part number: IRGPS40B120UDP
Manufacturer: International Rectifier
File Size: 345.61 KB
Datasheet: IRGPS40B120UDP_InternationalRectifier.pdf
Description: Insulated Gate Bipolar Transistor

IRGPS40B120UDP Product details

Features

Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Super-247 Package.
Lead-Free C UltraFast Co-Pack IGBT VCES = 1200V VCE(on) typ. = 3.12V G E @ VGE = 15V, N-channel ICE = 40A, Tj=25°C Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performa.

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Insulated Gate Bipolar Transistor International Rectifier

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