IRGPS40B120UDP - Insulated Gate Bipolar Transistor
IRGPS40B120UDP Features
* Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient.
* Super-247 Package.
* Lead-Free C U
