IRGPS40B120UD - Insulated Gate Bipolar Transistor
IRGPS40B120UD Features
* Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient.
* Super-247 Package. G E @ VGE = 15V, N-cha
