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IRGPS40B120UD

Insulated Gate Bipolar Transistor

IRGPS40B120UD Features

* Non Punch Through IGBT Technology.

* Low Diode VF.

* 10µs Short Circuit Capability.

* Square RBSOA.

* Ultrasoft Diode Reverse Recovery Characteristics.

* Positive VCE (on) Temperature Coefficient.

* Super-247 Package. G E @ VGE = 15V, N-cha

IRGPS40B120UD Datasheet (347.38 KB)

Preview of IRGPS40B120UD PDF

Datasheet Details

Part number:

IRGPS40B120UD

Manufacturer:

International Rectifier

File Size:

347.38 KB

Description:

Insulated gate bipolar transistor.
www.DataSheet4U.com PD- 94240A IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast Co-Pack IGBT VCES = 1.

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IRGPS40B120UD Insulated Gate Bipolar Transistor International Rectifier

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