IRGPS46160DPBF Datasheet, Transistor, International Rectifier

PDF File Details

Part number:

IRGPS46160DPBF

Manufacturer:

International Rectifier

File Size:

438.77kb

Download:

📄 Datasheet

Description:

Insulated gate bipolar transistor.

TAGS

IRGPS46160DPBF

International Rectifier

📁 Related Datasheet

IRGPS46160D - Insulated Gate Bipolar Transistor (International Rectifier)
VCES = 600V IC = 160A, TC = 100°C tSC 5µs, TJ(max) = 175°C VCE(on) typ. = 1.70V @ IC = 120A Applications • Industrial Motor Drive • Inverters • UPS .

IRGPS4067DPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
.DataSheet.co.kr PD - 97736 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features          Low VCE (on) Trench I.

IRGPS40B120U - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
PD- 94295B IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capabi.

IRGPS40B120UD - Insulated Gate Bipolar Transistor (International Rectifier)
.. PD- 94240A IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast Co-Pack IGBT VCES = 1.

IRGPS40B120UDP - Insulated Gate Bipolar Transistor (International Rectifier)
.. PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Non Punch Through IGBT .

IRGPS40B120UP - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
..net PD- 95899A IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Non Punch Through IGBT Technology. • 10µs S.

IRGPS60B120KD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
PD- 94239A IRGPS60B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH Motor Control Co-Pack IGBT ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE (on) N.

IRGPS60B120KDP - Insulated Gate Bipolar Transistor (International Rectifier)
PD- 95913 IRGPS60B120KDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT Features • Low VCE (on) .

IRGPS66160DPBF - Insulated Gate Bipolar Transistor (International Rectifier)
  IRGPS66160DPbF VCES = 600V IC = 160A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 120A Applications  Welding  H Bridge Con.

IRGP20B120U-E - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
PD- 94117 IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast Non Punch Through (NPT) Technology • 10 µs Short Circuit capability • .