IRGPS60B120KDP - Insulated Gate Bipolar Transistor

International Rectifier

Datasheet Details

Part number	IRGPS60B120KDP
Manufacturer	International Rectifier
File Size	132.19 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGPS60B120KDP-InternationalRectifier.pdf

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Super-247 Package.
Lead-Free C G E N-channel VCES = 1200V VCE(on) typ. = 2.50V @ VGE = 15V, ICE = 60A, Tj=25°C Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.

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Published: Feb 16, 2016 |