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IRGPS60B120KDP

Insulated Gate Bipolar Transistor

IRGPS60B120KDP Features

* Low VCE (on) Non Punch Through IGBT Technology.

* Low Diode VF.

* 10µs Short Circuit Capability.

* Square RBSOA.

* Ultrasoft Diode Reverse Recovery Characteristics.

* Positive VCE (on) Temperature Coefficient.

* Super-247 Package.

* L

IRGPS60B120KDP Datasheet (132.19 KB)

Preview of IRGPS60B120KDP PDF

Datasheet Details

Part number:

IRGPS60B120KDP

Manufacturer:

International Rectifier

File Size:

132.19 KB

Description:

Insulated gate bipolar transistor.

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IRGPS60B120KDP Insulated Gate Bipolar Transistor International Rectifier

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