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IRGPS60B120KD

INSULATED GATE BIPOLAR TRANSISTOR

IRGPS60B120KD Features

* Low VCE (on) Non Punch Through IGBT Technology.

* Low Diode VF.

* 10µs Short Circuit Capability.

* Square RBSOA.

* Ultrasoft Diode Reverse Recovery Characteristics.

* Positive VCE (on) Temperature Coefficient.

* Super-247 Package. VCES = 120

IRGPS60B120KD Datasheet (135.94 KB)

Preview of IRGPS60B120KD PDF

Datasheet Details

Part number:

IRGPS60B120KD

Manufacturer:

IRF

File Size:

135.94 KB

Description:

Insulated gate bipolar transistor.

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IRGPS60B120KD INSULATED GATE BIPOLAR TRANSISTOR IRF

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