IRGPS60B120KD - INSULATED GATE BIPOLAR TRANSISTOR

Datasheet Details

Part number	IRGPS60B120KD
Manufacturer	IRF
File Size	135.94 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGPS60B120KD_IRF.pdf

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Super-247 Package. VCES = 1200V VCE(on) typ. = 2.50V G E @ VGE = 15V, N-channel Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Significantly Less.

📁 IRGPS60B120KD Similar Datasheet

IRGPS60B120KDP - Insulated Gate Bipolar Transistor (International Rectifier)
IRGPS66160DPBF - Insulated Gate Bipolar Transistor (International Rectifier)
IRGPS4067DPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGPS40B120UD - Insulated Gate Bipolar Transistor (International Rectifier)
IRGPS40B120UDP - Insulated Gate Bipolar Transistor (International Rectifier)
IRGPS40B120UP - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGPS46160D - Insulated Gate Bipolar Transistor (International Rectifier)
IRGPS46160DPBF - Insulated Gate Bipolar Transistor (International Rectifier)

Other Datasheets by IRF

Published: Aug 23, 2005 |