IRGS4607DPBF Datasheet | Specifications & PDF Download

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IRGS4607DPBF Insulated Gate Bipolar Transistor

  VCES = 600V IC = 7.0A, TC =100°C tSC 5µ.

International Rectifier

IRGS4607DPBF - Insulated Gate Bipolar Transistor

  VCES = 600V IC = 7.0A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.75V @ IC = 4.0A IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate.
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