www.DataSheet4U.com PD - 91702B IRL1004 HEXFET®.
International Rectifier
3
IRLIZ24N - Power MOSFET
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ .
International Rectifier
3
IRL3715ZLPbF - Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free PD - 95581 IRL3715ZPbF IRL3715ZSPbF IRL3715ZLPbF H.
Fairchild Semiconductor
2
IRL640S - Power MOSFET
$GYDQFHG 3RZHU 026)(7 IRL640S FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge.
Fairchild Semiconductor
2
IRL640 - Power MOSFET
$GYDQFHG 3RZHU 026)(7 IRL640 FEATURES ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitanc.
Fairchild Semiconductor
2
IRL620 - Power MOSFET
$GYDQFHG 3RZHU 026)(7 IRL620 FEATURES ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitanc.
Fairchild Semiconductor
2
IRL510 - Power MOSFET
$GYDQFHG 3RZHU 026)(7 IRL510 FEATURES ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitanc.
HOTTECH
2
IRLML6401 - Power MOSFET
Plastic-Encapsulate Mosfets IRLML6401 l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and.
International Rectifier
2
IRLML2502PBF-1 - POWER MOSFET
VDS RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 20 0.045 8.0 4.2 V Ω nC A IRLML2502PbF-1 HEXFET® Power MOSFET G1 S2 3D Micro3™(SOT-23.
International Rectifier
2
IRLML2402GPBF - POWER MOSFET
l Generation V Technology l Ultra Low On-Resistance l N-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast S.
International Rectifier
2
IRLMS1503PBF-1 - Power MOSFET
VDS RDS(on) max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 30 0.10 0.20 6.4 3.2 V Ω nC A Features Industry-standard pinout.
IRF
2
IRL530NS - HEXFET Power MOSFET
PD - 91349C IRL530NS/L HEXFET® Power MOSFET Advanced Process Technology l Surface Mount (IRL530NS) l Low-profile through-hole (IRL530NL) l 175°C Oper.
IRF
2
IRL530N - HEXFET Power MOSFET
PD - 91348C IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching F.
Fairchild
2
IRL530A - Advanced Power MOSFET
Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extende.
IRF
2
IRL520N - HEXFET Power MOSFET
PD - 91494A IRL520N HEXFET® l l l l l l Power MOSFET VDSS = 100V Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Oper.
Fairchild
2
IRL520A - Advenced Power MOSFET
$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extende.
International Rectifier
2
IRLML2402 - HEXFET Power MOSFET
PD - 91257D HEXFET® Power MOSFET l l l l l l l IRLML2402 VDSS = 20V Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footpri.
International Rectifier
2
IRL7N1404 - HEXFET POWER MOSFET
PD - 94348A HEXFET® POWER MOSFET SURFACE MOUNT (SMD-1) IRL7N1404 40V, N-CHANNEL Product Summary Part Number IRL7N1404 BVDSS 40V RDS(on) 0.006Ω I.
International Rectifier
2
IRL3103D2 - MOSFET & SCHOTTKY RECTIFIER
PD 9.1660 PRELIMINARY l l l l l IRL3103D2 D FETKYTM MOSFET & SCHOTTKY RECTIFIER Copackaged HEXFET® Power MOSFET and Schottky Diode Generation 5 Tec.
International Rectifier
2
IRL3103 - Power MOSFET
PD - 91337 IRL3103 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Tempera.
International Rectifier
2
IRL3102S - Power MOSFET
PD 9.1691A PRELIMINARY l l l l l IRL3102S HEXFET® Power MOSFET D Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal.