IRL Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IRLR8726, IIRLR8726 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5.8mΩ ·Enhancement mode: ·100% avalanche t

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.044Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche

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IRLB8314PbF Application  Optimized for UPS/Inverter Applications  Low Voltage Power Tools Benefits  Best in Class Performance for UPS/Inverter App

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLB4132 ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·M

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isc N-Channel MOSFET Transistor IRLR3110Z, IIRLR3110Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤14mΩ ·Enhancement mode: ·100% avalanche

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  AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  Logic Level Gate Drive  150°C Operating Temperature  Fast Swi

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Application Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies

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www.DataSheet4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataShee DataSheet4U.com DataShe

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l Logic-Level Gate Drive l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l

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isc N-Channel MOSFET Transistor IRLR2905, IIRLR2905 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤27mΩ ·Enhancement mode: ·100% avalanche te

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IRLB4132PbF Application Optimized for UPS/Inverter Applications Low Voltage Power Tools Benefits Best in Class Performance for UPS/Inverter App

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRL7833，IIRL7833 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.8mΩ ·Enhancement mo

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive

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IRLML2502TRPBF N-Channel 20 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0.042 at VGS = 2.5 V 0.0

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VDS VGS Max RDS(on) max (@VGS = -4.5V) RDS(on) max (@VGS = -2.5V) -20 V ± 12 V 54 mΩ 95 mΩ PD - 97631 IRLML2244TRPbF HEXFET® Power MOSFET G1

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  AUTOMOTIVE GRADE AUIRLR2905 AUIRLU2905 Features  Advanced Planar Technology  Logic Level Gate Drive  Low On-Resistance  Dynamic dV/dT Rating

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PD - 94668B Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Sy

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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rec

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