IRL Datasheet | Pinout, Features, Price Comparison & PDF

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLB4132 ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·M

l Logic-Level Gate Drive l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l

IRL2910PBF-VB IRL2910PBF-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.017 at VGS = 10

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLB8743，IIRLB8743 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.2mΩ ·Enhancement

Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies

l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching G1 S2 Descripti

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLZ44N， IIRLZ44N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤22mΩ ·Enhancement mo

PD - 91366 IRL2203N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temper

PD - 93757C IRLML2502 HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in T

l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l RoHS Compliant, Halogen-Free D

l Logic-Level Gate Drive l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l

isc N-Channel MOSFET Transistor IRLR8726, IIRLR8726 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5.8mΩ ·Enhancement mode: ·100% avalanche t

PD - 95386A DIGITAL AUDIO MOSFET Features Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSO

IRLML0100TRPBF www.VBsemi.com IRLML0100TRPBF N-Channel 100 V (D-S) MOSFET MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.240 at VGS = 10

UMW IRLML5203TR -30V P-ChanneI MOSFET 1.Description The IRLML5203TR uses advanced trench technology to provide excellent RDS(on) with low gate charge

IRLML6401 Rev.D Nov.-2015 DATA SHEET AO / Descriptions SOT-23 P MOS 。P- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features ，，。 Ultra Low on

www.DataSheet.co.kr PD- 91380B IRLL2705 HEXFET® Power MOSFET Surface Mount Dynamic dv/dt Rating l Logic-Level Gate Drive l Fast Switching l Ease of

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLB3813，IIRLB3813 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤1.95mΩ ·Enhancement

l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Swit

l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Swit