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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.044Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche

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isc N-Channel MOSFET Transistor IRLR8726, IIRLR8726 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5.8mΩ ·Enhancement mode: ·100% avalanche t

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l Logic-Level Gate Drive l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l

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IRLB8314PbF Application  Optimized for UPS/Inverter Applications  Low Voltage Power Tools Benefits  Best in Class Performance for UPS/Inverter App

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLB4132 ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·M

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  AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  Logic Level Gate Drive  150°C Operating Temperature  Fast Swi

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PD- 97755 AUTOMOTIVE GRADE AUIRLL014N Features l Advanced Planar Technology l Low On-Resistance l Dynamic dv/dt Rating l 150°C Operating Temperature

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IRLML2502TRPBF N-Channel 20 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0.042 at VGS = 2.5 V 0.0

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VDS VGS Max RDS(on) max (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) 30 ± 12 29 37 Application(s) • Load/ System Switch V V mΩ mΩ IRLML6344TRPbF HEXFET

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  AUTOMOTIVE GRADE AUIRLL2705 Features  Advanced Planar Technology  Low On-Resistance  Logic Level Gate Drive  Dynamic dv/dt Rating  150°C Ope

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VDS RDS(on) max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 30 0.10 0.20 6.4 3.2 V Ω nC A Features Industry-standard pinout

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PD- 95675 IRLMS2002PbF l Ultra Low On-Resistance l N-Channel MOSFET l Surface Mount l Available in Tape & Reel l 2.5V Rated l Lead-Free D D G Descr

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Application Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRL3713， IIRL3713 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.0mΩ ·Enhancement m

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VDS VGS Max RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) -30 V ± 20 V 64 mΩ 103 mΩ PD - 96310C IRLML9301TRPbF HEXFET® Power MOSFET G1

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VDS RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -30 V 98 mΩ 165 9.5 nC -3.0 A IRLML5203PbF-1 HEXFET® Power MOS

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$GYDQFHG 3RZHU 026)(7 IRL510 FEATURES ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitanc

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PD - 91257D HEXFET® Power MOSFET l l l l l l l IRLML2402 VDSS = 20V Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footpri

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l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching G1 S2 Descripti

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