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UMW IRLML2803TR 30V N-ChanneI MOSFET 1.Description The IRLML2803TR uses advanced trench technology to provide excellent RDS(on) with low gate charge.

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UMW IRLML6302TR -20V P-ChanneI MOSFET 1.Features VDS (V)=-20V RDS(ON)<90mΩ(VGS=-4.5V) RDS(ON)<110mΩ(VGS=-2.7V) Lead-Free P-Channel MOSFET SOT-23 Foo

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UMW IRLML2246TR -20V P-ChanneI MOSFET 1.Description The IRLML2246TR uses advanced trench technology to provide excellent RDS(on) with low gate charge

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UMW IRLML5203TR -30V P-ChanneI MOSFET 1.Description The IRLML5203TR uses advanced trench technology to provide excellent RDS(on) with low gate charge

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLB4132 ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·M

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Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extende

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l Logic-Level Gate Drive l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l

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www.DataSheet.co.kr PD- 91380B IRLL2705 HEXFET® Power MOSFET Surface Mount Dynamic dv/dt Rating l Logic-Level Gate Drive l Fast Switching l Ease of

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isc N-Channel MOSFET Transistor IRLR8726, IIRLR8726 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5.8mΩ ·Enhancement mode: ·100% avalanche t

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLB8743，IIRLB8743 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.2mΩ ·Enhancement

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PD- 91499B IRLL014N HEXFET® Power MOSFET l l l l l l Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Swi

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive

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IRLB8314PbF Application  Optimized for UPS/Inverter Applications  Low Voltage Power Tools Benefits  Best in Class Performance for UPS/Inverter App

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Previous Datasheet Index Next Data Sheet PD - 9.1495 PRELIMINARY l l l l l l IRL540N HEXFET® Power MOSFET D Logic-Level Gate Drive Advanced Proce

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PD - 91366 IRL2203N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temper

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VDS VGS Max RDS(on) max (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) 30 ± 12 29 37 Application(s) • Load/ System Switch V V mΩ mΩ G1 S2 Features and B

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLB8748，IIRLB8748 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.8mΩ ·Enhancement

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VDS VGS Max RDS(on) max (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) 30 ± 12 29 37 Application(s) • Load/ System Switch V V mΩ mΩ IRLML6344TRPbF HEXFET

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PD -97363 IRLB3034PbF Applications www.datasheet4u.com l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power S

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLB3813，IIRLB3813 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤1.95mΩ ·Enhancement

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