ISCNH363N (INCHANGE)
Silicon NPN Power Transistor
isc N-Channel MOSFET Transistor
ISCNH363N
FEATURES ·Drain Current : ID= 59A@ TC=25℃ ·Drain Source Voltage
: VDSS= 300V(Min) ·Static Drain-Source On-
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isc N-Channel MOSFET Transistor ISCNH363N FEATUR.
Silicon NPN Power Transistor
ISCNH363N Distributor
