ISCNH363N - Silicon NPN Power Transistor

INCHANGE

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Datasheet Details

Part number	ISCNH363N
Manufacturer	INCHANGE
File Size	272.18 KB
Description	Silicon NPN Power Transistor
Datasheet	ISCNH363N-INCHANGE.pdf

ISCNH363N Product details

Description

motor drive, DC-DC converter, power switch and solenoid drive.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 300 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 59 A PD Total Dissipation @TC=25℃ 235 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.53 UNIT ℃/W isc web

Features

Drain Current : ID= 59A@ TC=25℃.
Drain Source Voltage : VDSS= 300V(Min).
Static Drain-Source On-Resistance : RDS(on) = 36mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Jun 30, 2022 |