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ISCNH363N

Silicon NPN Power Transistor

ISCNH363N Features

* Drain Current : ID= 59A@ TC=25℃

* Drain Source Voltage : VDSS= 300V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 36mΩ(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* motor drive, DC-DC conver

ISCNH363N General Description


*motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 300 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 59 A PD Total Dissipation @TC=25℃ 235 W TJ Max..

ISCNH363N Datasheet (272.18 KB)

Preview of ISCNH363N PDF

Datasheet Details

Part number:

ISCNH363N

Manufacturer:

INCHANGE

File Size:

272.18 KB

Description:

Silicon npn power transistor.

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ISCNH363N Silicon NPN Power Transistor INCHANGE

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