ISCNH370W - N-Channel MOSFET Transistor

Inchange Semiconductor

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Datasheet Details

Part number	ISCNH370W
Manufacturer	Inchange Semiconductor
File Size	304.17 KB
Description	N-Channel MOSFET Transistor
Datasheet	ISCNH370W-InchangeSemiconductor.pdf

ISCNH370W Product details

Description

motor drive, DC-DC converter, power switch and solenoid drive.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 40 A IDM Drain Current-Single Pluse 120 A PD Total Dissipation @TC=25℃ 337 W TJ Max.Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junctio

Features

Drain Current : ID= 40A@ TC=25℃.
Drain Source Voltage : VDSS= 650V(Min).
Static Drain-Source On-Resistance : RDS(on) = 95mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Jun 30, 2022 |