ISCN372M Silicon NPN Power Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor ISCN372M .
High Breakdown Voltage- : V(BR)CBO= 1500V(Min). High Switching Speed. High Reliability. Minimum Lot-to-Lot variations for robust devi.

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Datasheet Specifications

Part number: ISCN372M
Manufacturer: INCHANGE
File Size: 228.88 KB
Datasheet: ISCN372M-INCHANGE.pdf
Description: Silicon NPN Power Transistor

Applications

* Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A

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ISCN372M Silicon NPN Power Transistor INCHANGE

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