Datasheet4U Logo Datasheet4U.com

ISCNH060D - N-Channel MOSFET Transistor

📥 Download Datasheet

Preview of ISCNH060D PDF
datasheet Preview Page 2

Datasheet Details

Part number ISCNH060D
Manufacturer Inchange Semiconductor
File Size 263.16 KB
Description N-Channel MOSFET Transistor
Datasheet download datasheet ISCNH060D-InchangeSemiconductor.pdf

ISCNH060D Product details

Description

motor drive, DC-DC converter, power switch and solenoid drive.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 100 A PD Total Dissipation @TC=25℃ 90 W TJ Max.Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.67 UNIT ℃/W ISCNH06

Features

📁 ISCNH060D Similar Datasheet

  • ISCNH363N - Silicon NPN Power Transistor (INCHANGE)
  • ISCN366P - Silicon NPN Power Transistor (INCHANGE)
  • ISCN372M - Silicon NPN Power Transistor (INCHANGE)
  • ISCN372N - Silicon NPN Power Transistor (INCHANGE)
  • ISCNL256N - N-Channel MOSFET (INCHANGE)
  • ISC-1008 - Surface Mount Wirewound Shielded Inductor (Vishay Siliconix)
  • ISC-1210 - Shielded Inductors (Vishay Siliconix)
  • ISC-1812 - Shielded Inductors (Vishay Siliconix)
Other Datasheets by Inchange Semiconductor
Published: |